bfp196t/BFP196TR/bfp196tw vishay semiconductors 1 (5) www.vishay.com document number 85091 rev. 1, 12nov01 silicon npn planar rf transistor electrostatic sensitive device. observe precautions for handling. applications for low noise, low distortion broadband amplifiers in telecommunications and antenna systems and power amplifiersfor dect and pcn systems at collector currents between 20 ma and 80 ma up to 2 ghz features low noise figure high transition frequency f t = 7.5 ghz excellent large signal behaviour 21 4 3 13628 bfp196tmarking: 196 plastic case (sot 143) 1 = collector, 2 = emitter, 3 = base, 4 = emitter 2 1 3 4 13632 bfp193twmarking: w96 plastic case (sot 343) 1 = collector, 2 = emitter, 3 = base, 4 = emitter 2 1 43 13629 bfp193trmarking: r96 plastic case (sot 143r) 1 = collector, 2 = emitter, 3 = base, 4 = emitter absolute maximum ratings t amb = 25 c, unless otherwise specified parameter test conditions type symbol value unit collector-base voltage v cbo 20 v collector-emitter voltage v ceo 12 v emitter-base voltage v ebo 2 v collector current i c 100 ma total power dissipation t amb 60 c p tot 500 mw junction temperature t j 150 c storage temperature range t stg 65 to +150 c
bfp196t/BFP196TR/bfp196tw vishay semiconductors www.vishay.com 2 (5) rev. 1, 12nov01 document number 85091 maximum thermal resistance t amb = 25 c, unless otherwise specified parameter test conditions symbol value unit junction ambient on glass fibre printed board (25 x 20 x 1.5) mm 3 plated with 35 m m cu r thja 180 k/w electrical dc characteristics t amb = 25 c, unless otherwise specified parameter test conditions symbol min. typ. max. unit collector cut-off current v ce = 20 v, v be = 0 i ces 100 m a collector-base cut-off current v cb = 10 v, i e = 0 i cbo 100 na emitter-base cut-off current v eb = 1 v, i c = 0 i ebo 1 m a collector-emitter breakdown voltage i c = 1 ma, i b = 0 v (br)ceo 12 v collector-emitter saturation voltage i c = 70 ma, i b = 7 ma v cesat 0.1 0.5 v dc forward current transfer ratio v ce = 8 v, i c = 50 ma h fe 50 100 150 electrical ac characteristics t amb = 25 c, unless otherwise specified parameter test conditions symbol min. typ. max. unit transition frequency v ce = 8 v, i c = 50 ma, f = 1 ghz f t 6 7.5 ghz collector-base capacitance v cb = 10 v, f = 1 mhz c cb 1.0 1.4 pf collector-emitter capacitance v ce = 10 v, f = 1 mhz c ce 0.3 pf emitter-base capacitance v eb = 0.5 v, f = 1 mhz c eb 3.5 pf noise figure v ce = 8 v, i c = 20 ma, z s = z sopt , z l = 50 , f = 900 mhz f 1.5 db v ce = 8 v, i c = 20 ma, z s = z sopt , z l = 50 , f = 2 ghz f 2.5 db power gain v ce = 8 v, i c = 50 ma, z s = z sopt , z l = 50 , f = 900 mhz g pe 16 db v ce = 8 v, i c = 50 ma, z s = z sopt , z l = 50 , f = 2 ghz g pe 10 db transducer gain v ce = 8 v, i c = 50 ma, z 0 = 50 , f = 900 mhz ? s 21e ? 2 12.5 db v ce = 8 v, i c = 50 ma, z 0 = 50 , f = 2 ghz ? s 21e ? 2 6.5 db third order intercept point at output v ce = 8 v, i c = 50 ma, f = 900 mhz ip 3 36 dbm
bfp196t/BFP196TR/bfp196tw vishay semiconductors 3 (5) www.vishay.com document number 85091 rev. 1, 12nov01 dimensions of bfp196t in mm 96 12240 dimensions of BFP196TR in mm 96 12239
bfp196t/BFP196TR/bfp196tw vishay semiconductors www.vishay.com 4 (5) rev. 1, 12nov01 document number 85091 dimensions of bfp196tw in mm 96 12237
bfp196t/BFP196TR/bfp196tw vishay semiconductors 5 (5) www.vishay.com document number 85091 rev. 1, 12nov01 ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol ( 1987) and its london amendments ( 1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substanc es. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 (0)7131 67 2831, fax number: 49 (0)7131 67 2423
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